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(R)
X00602MA
SENSITIVE GATE SCR
FEATURES IT(RMS) = 0.8A Sensitive gate : IGT < 200 A VDRM/VRRM = 600 V Low holding current : IH < 5 mA
A G K
DESCRIPTION The X00602MA SCR uses a high performance glass passivated PNPN technology. This device is perfectly suited for applications requiring very low gate sensitivity such as sensors, detectors, pilot for larger thyristors, Ground Fault Interruptor (GFI), small motor control, relay drivers, etc...
K
G
A
TO92 (Plastic)
ABSOLUTE RATINGS (limiting values) Symbol VDRM VRRM IT(RMS) IT(AV) ITSM I2t dI/dt Tstg Tj Tl Parameter Repetitive peak off-state voltage RGK = 1K RMS on-state current (180 conduction angle) Average on-state current (180 conduction angle) Non repetitive surge peak on-state current (Tj initial = 25C ) I2t Value for fusing Critical rate of rise of on-state current diG /dt = 0.1 A/s. IG = 10 mA Storage temperature range Operating junction temperature range Maximum lead temperature for soldering during 10s at 2mm from case Tj = 125C Tl= 85C Tl= 85C tp = 8.3 ms tp = 10 ms tp = 10 ms Value 600 0.8 0.5 10 9 0.5 50 - 40, + 150 - 40, + 125 260 A2s A/s C C Unit V A A A
May 1999 - Ed: 1
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X00602MA
THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-l) Junction to ambient Junction to lead for DC Parameter Value 150 70 Unit C/W C/W
GATE CHARACTERISTICS PG (AV)= 0.1W PGM = 2W (tp = 20s) IGM = 1A (tp = 20s)
ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD VRG IH IL VTM IDRM IRRM dV/dt Test Conditions VD=12V (DC) RL=140 VD=12V (DC) RL=140 VD = VDRM RL = 33K RGK = 1 K IRG =10A IT= 50mA RGK = 1 K IG= 500A RGK = 1 K ITM= 1A tp= 380s VD = VDRM RGK = 1 K VR = VRRM VD=67%VDRM RGK = 1 K Tj= 25C Tj= 25C Tj= 125C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 125C Tj= 125C MAX MAX MIN MIN MAX MAX MAX MAX MAX MIN Value 200 0.8 0.2 5 5 6 1.35 1 100 25 Unit A V V V mA mA V A A V/s
ORDERING INFORMATION
X
SCR TOP GLASS
006
02
M
A
PACKAGE : A = TO92
CURRENT
SENSITIVITY 02 : 200A
VOLTAGE M = 600V
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X00602MA
Fig. 1: Maximum average power dissipation versus average on-state current. Fig. 2: Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and Tlead).
P(W) 0.65 0.60 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0.0
P(W)
=90 =60 =30 D.C. =120 =180
Tlead (C)
Rth(j-a)=Rth(j-l)
360
IT(av)(A) 0.1 0.2 0.3 0.4
0.65 0.60 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00
=180
85 95
Rth(j-a)=150C/W
105 115
Tamb(C) 0 25 50 75 100 125
125
0.5
0.6
Fig. 3-1: Average and D.C on-state current versus lead temperature.
Fig. 3-2: Average and D.C on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout).
IT(av)(A)
IT(av)(A) 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0
D.C.
=180
Tlead(C) 0 25 50 75 100 125
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0
D.C.
=180
Tamb(C) 0 25 50 75 100 125
Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration.
K=[Zth(j-a)/Rth(j-a)] 1.00
Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature.
IGT,IH[Tj] / IGT,IH[Tj=25C] 1.6 1.4 1.2 1.0
0.10
0.8 0.6 0.4
IGT
IH
tp(s) 0.01 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.2 0.0 -40 -20 0 20
Tj(C) 40 60 80 100 120 140
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X00602MA
Fig. 6: Relative variation of holding current versus gate-cathode resistance (typical values).
3.5 3.0 2.5 2.0
1E+0 1E+1
VD=VDRM
Fig. 7: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values).
1E+2
dV/dt[Rgk] / dV/dt[Rgk=1k]
Tj=125C VD=0.67xVDRM
IH[Rgk] / IH[Rgk=1k ]
Tj=25C
1.5 1.0 0.5
1E-1
Rgk(k)
0.0 1E-2 1E-1 1E+0 1E+1 1E+2
Rgk(k)
1E-2 1E-2 1E-1 1E+0 1E+1
Fig. 8: Relative variation of dV/dt immunity versus additionnal gate-cathode capacitance (typical values).
dV/dt[Cgk] / dV/dt [Rgk=1k]
Fig. 9: Non repetitive surge peak on-state current versus number of cycles.
20
Tj=125C Rgk=1k
ITSM(A) 10 9 8 7 6 5 4 3 2 1 0
10
Tj initial=25C F=50Hz
10
VD=0.67xVDRM VD=VDRM
5
2 Cgk(nF) 1 2 5
Number of cycles 1 10 100 1000
1
Fig. 10: Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of I2t.
ITSM(A),It(As) 50.0
ITSM
Tj initial=25C
Fig. 11: On-state characteristics (maximum values).
ITM(A) 1E+1
Tj max.: Vto=0.83V Rt=245m
10.0
1E+0
Tj=Tj max.
1.0
It
1E-1
Tj=25C
tp(ms) 0.1 1 2 5 10
VTM(V) 1E-2 0.5 1.0 1.5 2.0 2.5 3.0 3.5
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X00602MA
PACKAGE MECHANICAL DATA TO92 (Plastic) DIMENSIONS REF.
A a B C
Millimeters 1.35 4.70 2.54 4.40 12.70 3.70 0.45 0.173 0.500
Inches 0.053 0.185 0.100
Min. Typ. Max. Min. Typ. Max. A B C D E F a
F
D
E
0.146 0.017
Ordering type X00602MA 1AA2 X00602MA 2AL2
Marking X0602MA X0602MA
Package TO92 TO92
Weight 0.2g. 0.2g.
Base qty 2500 2000
Delivery mode Bulk Ammopack
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com 5/5

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